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**＜KEK IPNS+ITDC Detector seminar (10:00-, October 21th and 10:00-, October
30th) : A couple of seminars for CMOS monolithic detector＞**

(English announcement follows after Japanese)

皆様、

（重複して受け取られた方はご容赦下さい）

この度、測定器開発センターが素核研セミナーと協力して、
測定器セミナーを開催していくことになりました。
何か測定器に関するセミナーの提案ありましたら、KEK坂下または
お近くの測定器開発センターメンバーまでご連絡ください。

今回は、10/21と10/31に予定している、
CMOS技術を使ったモノリシック検出器に関するトピックスについての
３件の測定器セミナーをご案内します。
セミナーは英語での開催となります。
皆様、奮ってご参加下さい。また関係者への周知をよろしくお願いいたします。

---
10月21日(金) 10:00-12:00
Venue : KEKつくば 4号館325号室 + Zoom
https://us02web.zoom.us/j/82312967701

(1)
Title : The MONOLITH project - towards picosecond timing in monolithic
silicon pixel ASIC
Speaker : Giuseppe Iacobucci
Abstract : The MONOLITH ERC Advanced project aims at producing a
monolithic silicon pixel ASIC with 50µm pixel pitch and picosecond-level
time stamping. The two main ingredients are low-noise, fast SiGe BiCMOS
electronics and a novel sensor concept, the Picosecond Avalanche
Detector (PicoAD). The PicoAD uses a multi-PN junction to engineer the
electric field and produce a continuous gain layer deep in the sensor
volume. The result is an ultra-fast current signal with low intrinsic
jitter in a full fill factor and highly granular monolithic detector.
The proof-of-concept ASIC prototype recently produced proved that the
PicoAD principle works. Testbeam measurements show that the
proof-of-concept prototype is fully efficient and achieves time
resolutions of 17ps averaged on the pixel surface, with 13ps at the
center of the pixel and 25ps at the pixel edge.

(2)
Title : Monolithic Silicon Detector Applications at UniGe
Speaker : Didier Ferrere
Abstract : The use of MAPS has an enormous potential in the next decades
in many fields. After several years of successful R&D with monolithic
pixel detector with excellent timing resolution obtained using 130nm
SiGe BiCMOS technology, UniGe is implementing this technology in two
projects.
1. The FASER experiment at the LHC will be instrumented with a high
precision W-Si preshower to identify and reconstruct electromagnetic
showers produced by two O(TeV) photons at distances down to 200µm. The
new detector features a monolithic silicon ASIC with hexagonal pixels of
65 µm side, extended dynamic range for the charge measurement and
capability to store the charge information for thousands of pixels per
event. A description of the pre-shower and its expected performance will
be presented together with the design of the monolithic ASIC and the lab
and test beam results of the pre-production ASIC.
2. Together with the University Hospital of Luzern and the École
Polytechnique Fédérale de Lausanne, the University of Geneva has
launched the 100µPET project that aims to produce a small-animal PET
scanner with ultra-high resolution. This prototype, which will use a
stack of 60 monolithic silicon pixel sensors as a detection medium, will
provide volumetric spatial resolution one order of magnitude better than
today’s best operating PET scanners. The R&D on the optimisation of the
monolithic pixel ASIC, the readout system and the mechanics, as well as
the simulation of the scanner performance, will be presented.

10月31日(月) 10:00-11:00
Venue : KEKつくば 4号館セミナーホール + Zoom
https://us02web.zoom.us/j/84491410516

Title : Recent advances in the development of radiation hard monolithic
CMOS tracking sensors
Speaker : H. Pernegger / CERN EP Department
Abstract : Depleted Monolithic Active Pixel Sensor (DMAPS) have been
developed in various CMOS imaging process with the aim to provide
experiments at High-Luminosity LHC and future HEP experiments with
radiation hard tracking pixel detectors. Monolithic CMOS sensors allow
to minimize scattering material for best tracking performance.
Furthermore they reduce construction costs and assembly time of detector
systems due to absence of bump-bonding required in hybrid sensors.
Special interest lies now in radiation hardness of DMAPS for operation
conditions typical of pp-collider experiments at LHC and future
colliders with >100 Mrad in Total Ionizing Dose (TID) and >1x10^15 1 MeV
n_eq/cm^2 in Non-Ionizing Energy Loss (NIEL). The presentation will
outline different approaches to achieve radiation hard tracking sensors
in commercially available CMOS imaging processes. It will summarise
recent achievements for sensors with large and small collection
electrodes in the TowerJazz 180nm and the LFoundry 150nm imaging process
as examples. The presentation will also present different
implementations of sensor architecture ranging from purely passive CMOS
sensors to pixel sensors using column-drain readout schemes for
triggered applications and new asynchronous readout for data-streaming
applications in future trackers.

測定器開発センターセミナー係
坂下
and
素核研セミナー委員
松原・中村

---
The KEK IPNS Instrumentation Technology Development Center (ITDC) starts
arranging
detector seminars in cooperation with the IPNS Seminar Committee.
If you have any suggestions or proposals for a seminar topics, please
contact to me
or a member of the ITDC.

Today, we will announce a couple of seminars about monolithic silicon
detectors
as the following.
The seminar will be held in English. We look forward to your participation.

--
October 21th (Fri) 10:00-12:00
Venue : KEK Tsukuba campus 4th building room 325 + Zoom
https://us02web.zoom.us/j/82312967701

October 30th (Mon) 10:00-11:00
Venue : KEK Tsukuba campus 4th building seminar hall + Zoom
https://us02web.zoom.us/j/84491410516

ITDC Seminar staff
K. Sakashita
and
IPNS Seminar Committee
T. Matsubara / K. Nakamura