<<<<<<<<<<<<<< CRC News 2022年10月12日 >>>>>>>>>>>>>> CRC会員 各位 CRC事務局 **＜KEK IPNS+ITDC Detector seminar (10:00-, October 21th and 10:00-, October 30th) : A couple of seminars for CMOS monolithic detector＞** (English announcement follows after Japanese) 皆様、 （重複して受け取られた方はご容赦下さい） この度、測定器開発センターが素核研セミナーと協力して、 測定器セミナーを開催していくことになりました。 何か測定器に関するセミナーの提案ありましたら、KEK坂下または お近くの測定器開発センターメンバーまでご連絡ください。 今回は、10/21と10/31に予定している、 CMOS技術を使ったモノリシック検出器に関するトピックスについての ３件の測定器セミナーをご案内します。 セミナーは英語での開催となります。 皆様、奮ってご参加下さい。また関係者への周知をよろしくお願いいたします。 --- 10月21日(金) 10:00-12:00 Venue : KEKつくば 4号館325号室 + Zoom https://us02web.zoom.us/j/82312967701 (1) Title : The MONOLITH project - towards picosecond timing in monolithic silicon pixel ASIC Speaker : Giuseppe Iacobucci Abstract : The MONOLITH ERC Advanced project aims at producing a monolithic silicon pixel ASIC with 50µm pixel pitch and picosecond-level time stamping. The two main ingredients are low-noise, fast SiGe BiCMOS electronics and a novel sensor concept, the Picosecond Avalanche Detector (PicoAD). The PicoAD uses a multi-PN junction to engineer the electric field and produce a continuous gain layer deep in the sensor volume. The result is an ultra-fast current signal with low intrinsic jitter in a full fill factor and highly granular monolithic detector. The proof-of-concept ASIC prototype recently produced proved that the PicoAD principle works. Testbeam measurements show that the proof-of-concept prototype is fully efficient and achieves time resolutions of 17ps averaged on the pixel surface, with 13ps at the center of the pixel and 25ps at the pixel edge. (2) Title : Monolithic Silicon Detector Applications at UniGe Speaker : Didier Ferrere Abstract : The use of MAPS has an enormous potential in the next decades in many fields. After several years of successful R&D with monolithic pixel detector with excellent timing resolution obtained using 130nm SiGe BiCMOS technology, UniGe is implementing this technology in two projects. 1. The FASER experiment at the LHC will be instrumented with a high precision W-Si preshower to identify and reconstruct electromagnetic showers produced by two O(TeV) photons at distances down to 200µm. The new detector features a monolithic silicon ASIC with hexagonal pixels of 65 µm side, extended dynamic range for the charge measurement and capability to store the charge information for thousands of pixels per event. A description of the pre-shower and its expected performance will be presented together with the design of the monolithic ASIC and the lab and test beam results of the pre-production ASIC. 2. Together with the University Hospital of Luzern and the École Polytechnique Fédérale de Lausanne, the University of Geneva has launched the 100µPET project that aims to produce a small-animal PET scanner with ultra-high resolution. This prototype, which will use a stack of 60 monolithic silicon pixel sensors as a detection medium, will provide volumetric spatial resolution one order of magnitude better than today’s best operating PET scanners. The R&D on the optimisation of the monolithic pixel ASIC, the readout system and the mechanics, as well as the simulation of the scanner performance, will be presented. 10月31日(月) 10:00-11:00 Venue : KEKつくば 4号館セミナーホール + Zoom https://us02web.zoom.us/j/84491410516 Title : Recent advances in the development of radiation hard monolithic CMOS tracking sensors Speaker : H. Pernegger / CERN EP Department Abstract : Depleted Monolithic Active Pixel Sensor (DMAPS) have been developed in various CMOS imaging process with the aim to provide experiments at High-Luminosity LHC and future HEP experiments with radiation hard tracking pixel detectors. Monolithic CMOS sensors allow to minimize scattering material for best tracking performance. Furthermore they reduce construction costs and assembly time of detector systems due to absence of bump-bonding required in hybrid sensors. Special interest lies now in radiation hardness of DMAPS for operation conditions typical of pp-collider experiments at LHC and future colliders with >100 Mrad in Total Ionizing Dose (TID) and >1x10^15 1 MeV n_eq/cm^2 in Non-Ionizing Energy Loss (NIEL). The presentation will outline different approaches to achieve radiation hard tracking sensors in commercially available CMOS imaging processes. It will summarise recent achievements for sensors with large and small collection electrodes in the TowerJazz 180nm and the LFoundry 150nm imaging process as examples. The presentation will also present different implementations of sensor architecture ranging from purely passive CMOS sensors to pixel sensors using column-drain readout schemes for triggered applications and new asynchronous readout for data-streaming applications in future trackers. 測定器開発センターセミナー係 坂下 and 素核研セミナー委員 松原・中村 --- The KEK IPNS Instrumentation Technology Development Center (ITDC) starts arranging detector seminars in cooperation with the IPNS Seminar Committee. If you have any suggestions or proposals for a seminar topics, please contact to me or a member of the ITDC. Today, we will announce a couple of seminars about monolithic silicon detectors as the following. The seminar will be held in English. We look forward to your participation. -- October 21th (Fri) 10:00-12:00 Venue : KEK Tsukuba campus 4th building room 325 + Zoom https://us02web.zoom.us/j/82312967701 (1) Title : The MONOLITH project - towards picosecond timing in monolithic silicon pixel ASIC Speaker : Giuseppe Iacobucci Abstract : The MONOLITH ERC Advanced project aims at producing a monolithic silicon pixel ASIC with 50µm pixel pitch and picosecond-level time stamping. The two main ingredients are low-noise, fast SiGe BiCMOS electronics and a novel sensor concept, the Picosecond Avalanche Detector (PicoAD). The PicoAD uses a multi-PN junction to engineer the electric field and produce a continuous gain layer deep in the sensor volume. The result is an ultra-fast current signal with low intrinsic jitter in a full fill factor and highly granular monolithic detector. The proof-of-concept ASIC prototype recently produced proved that the PicoAD principle works. Testbeam measurements show that the proof-of-concept prototype is fully efficient and achieves time resolutions of 17ps averaged on the pixel surface, with 13ps at the center of the pixel and 25ps at the pixel edge. (2) Title : Monolithic Silicon Detector Applications at UniGe Speaker : Didier Ferrere Abstract : The use of MAPS has an enormous potential in the next decades in many fields. After several years of successful R&D with monolithic pixel detector with excellent timing resolution obtained using 130nm SiGe BiCMOS technology, UniGe is implementing this technology in two projects. 1. The FASER experiment at the LHC will be instrumented with a high precision W-Si preshower to identify and reconstruct electromagnetic showers produced by two O(TeV) photons at distances down to 200µm. The new detector features a monolithic silicon ASIC with hexagonal pixels of 65 µm side, extended dynamic range for the charge measurement and capability to store the charge information for thousands of pixels per event. A description of the pre-shower and its expected performance will be presented together with the design of the monolithic ASIC and the lab and test beam results of the pre-production ASIC. 2. Together with the University Hospital of Luzern and the École Polytechnique Fédérale de Lausanne, the University of Geneva has launched the 100µPET project that aims to produce a small-animal PET scanner with ultra-high resolution. This prototype, which will use a stack of 60 monolithic silicon pixel sensors as a detection medium, will provide volumetric spatial resolution one order of magnitude better than today’s best operating PET scanners. The R&D on the optimisation of the monolithic pixel ASIC, the readout system and the mechanics, as well as the simulation of the scanner performance, will be presented. October 30th (Mon) 10:00-11:00 Venue : KEK Tsukuba campus 4th building seminar hall + Zoom https://us02web.zoom.us/j/84491410516 Title : Recent advances in the development of radiation hard monolithic CMOS tracking sensors Speaker : H. Pernegger / CERN EP Department Abstract : Depleted Monolithic Active Pixel Sensor (DMAPS) have been developed in various CMOS imaging process with the aim to provide experiments at High-Luminosity LHC and future HEP experiments with radiation hard tracking pixel detectors. Monolithic CMOS sensors allow to minimize scattering material for best tracking performance. Furthermore they reduce construction costs and assembly time of detector systems due to absence of bump-bonding required in hybrid sensors. Special interest lies now in radiation hardness of DMAPS for operation conditions typical of pp-collider experiments at LHC and future colliders with >100 Mrad in Total Ionizing Dose (TID) and >1x10^15 1 MeV n_eq/cm^2 in Non-Ionizing Energy Loss (NIEL). The presentation will outline different approaches to achieve radiation hard tracking sensors in commercially available CMOS imaging processes. It will summarise recent achievements for sensors with large and small collection electrodes in the TowerJazz 180nm and the LFoundry 150nm imaging process as examples. The presentation will also present different implementations of sensor architecture ranging from purely passive CMOS sensors to pixel sensors using column-drain readout schemes for triggered applications and new asynchronous readout for data-streaming applications in future trackers. ITDC Seminar staff K. Sakashita and IPNS Seminar Committee T. Matsubara / K. Nakamura