<<<<<<<<<<<<<<<<<<< CRC News No.1491:2010年 5月31日 >>>>>>>>>>>>>>>>>>>>> CRC会員 各位 CRC事務局 宇宙線研支部 ********************< 6/14 KEK測定器開発室セミナー >******************** 皆様 KEK測定器開発室では各分野の最新情報とその可能性について議論すべく、 機構横断的にセミナーを開催しております。 さて、下記の通り測定器開発室セミナ- " How to Deliver Very Large Amounts of Low Voltage Current to HEP Detectors in High Radiation & Magnetic Fields?"を開催しますので、多数ご参集くださいますよう ご案内いたします。 期日が迫りましたら、再度ご案内を差し上げます。                        KEK測定器開発室            記 日時:2010-06-14 15:00〜16:00 場所:3号館4階会議室425 講演者:Satish K Dhawan氏 所属:Yale University タイトル:How to Deliver Very Large Amounts of Low Voltage Current to HEP Detectors in High Radiation & Magnetic Fields? アブストラクト: DC-DC Converter Plug in cards with air coils have been developed and tested. Two different commercial chips are used; one is monolithic while the other is a 3 die MCM (multi chip module). MCM can have optimized version of the FET switches for the high and low side with a separate converter chip. All three can be fabricated with different technologies and in principle have better performance. However the radiation results can be difficult to understand. One of the purposes was to see if the noise was more with the MCM monolithic converter; it does not seem to be the case. The above converter chips are not radiation resistant. We are to study the conducted and radiated noise with the noise with the KPiX chip printed circuit boards. When tested with the ATLAS Silicon tracker and RHIC Polarimeter detector, there was no additional noise due to the close proximity of these cards while also supplying power to the readout chips. There is radiated noise to the silicon strips that can be made negligible by using 20 μm of Al shield. Initial power pulsing tests have been done with an electronic load. A National semiconductor application engineer is looking into simulating SiD conditions to obtain faster switching with smaller output capacitors. Our investigation has lead to technology for radiation resistant LDMOS CMOS devices at 12 -20 volts while using thin oxide of 5 -7 nm. Two foundries have been identified and verified. Our focus is on commercial devices as there are very little power device ASIC design capability available in the US HEP community. Gallium Nitride devices offer high frequency and very high radiation resistance as some of the transistor structures do not use oxide insulator. 測定器開発室セミナーの情報は以下からもご覧頂けます。 http://rd.kek.jp/seminar_01.html また、TV会議システム等での中継も可能です。 ご希望の方は担当者までお問い合わせください。 担当:海野< yoshinobu.unno at kek.jp> ======================================